GaAs-GaAlAs Double-Heterostructure Injection Lasers with Distributed Feedback

GaAs-GaAlAs double-heterostructure distributed-feedback injection lasers are investigated a t temperatures between 80 and 150 K under pulsed operation. The optical feedback for laser oscillation is provided by a corrugated interface between the p-GaAs active layer and the pGaA1As layer. The corrugation is made by two methods, ion milling and chemical etching, and the latter method is found to give the lower threshold. The laser oscillation occurs in a single longitudinal mode, whose wavelength is stable against the change of the excitation level. The temperature dependence of the wavelength of the distributedfeedback laser is shown to be 0.5 A/deg, which is'about 4 to + that of the conventional Fabry-Perot (FP) laser.